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TEMPERATURE COMPENSATED PIEZOELECTRIC CRYSTAL OSCILLATOR GK367-TK-04

TEMPERATURE COMPENSATED PIEZOELECTRIC CRYSTAL OSCILLATOR GK367-TK-04

Temperature compensated piezoelectric crystal oscillator GK367-TK-04 manufactured as per KPGF.433531.074 TU, SMD7 package

Basic parameters

  • Nominal frequency range, MHz 5 - 64
  • LWH, mm 7х5х1,8
  • Interconnection technique SMD (Surface mounted device / Surface mounting)
  • Waveform CMOS, Clipped Sin
  • Quality category “QCD”

Number and pin assignment

  • 1 Enabled to a common conductor
  • 5 General
  • 6 Output
  • 10 Power supply
  • 2, 3, 4, 7, 8, 9 Process-related (disabled)
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Overrall dimensions

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GK367-TK-04 - Dimensions
GK367-TK-04
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Model identification code: GK367-TK-04-AG-30М-3.3С-B KPGF.433531.074 TU

Oscillator type GK367-TK-04
Operating temperature range А
Temperature instability of frequency within operating temperature range G
Nominal frequency, MHz 30М
Supply voltage, V 3,3
Output wave form (S – Clipped Sine, CMOS – no sign) С
Relative frequency change B

Electrical parameter

Parameter Value
Nominal frequency range, MHz 5 - 64
Adjustment accuracy, х10-6 ± 1
Frequency tuning, х10-6, min ± (5…20)*
Control voltage, V: 0
Output parameters:
wave form Clipped Sine
Peak-to-peak voltage, V, min. 0,8
Spectral density of phase noise at 10 kHz offset, dB/Hz, max. -130
Waveform CMOS
Logic ‘1’, V min. 0,9 Us
Logic ‘0’, V max. 0,1 Us
Pulse ratio, % max. 50 ± 5
Rise/fall time, ns, max: 3
Supply voltage, V 2,7 ± 5 %; 3,0 ± 5 %; 3,3 ± 5 %; 5,0 ± 5 %;
Output voltage vs. load deviation ±20 %, ×10-6, max. ± 5
Load coefficient ± 20 %, ×10-6, max. ± 0,2
Load capacitance:
Clipped Sine 10±20% kOhm, 10±20% pF
CMOS 15±20% pF
Supply current (Clipped Sine), mA 1 - 4
Supply current (CMOS), mA 4 - 24

Impact resistance to external factors action

Parameter Value
Mechanical impact resistance М6 Group, GOST 25467
Climatic impact resistance UKhL 2.1 cat., GOST 25467
Leak-proof construction
γ-percentile time to failure at γ = 95 % under standard operating conditions (at ambient temperature of 85 °С) for min. 20 000 h within 15 years of service life
γ-percentile storageability time – min. 15 years with γ = 95 %

Notes:

1. * - To be specified depending on nominal frequency. 2. Specifications can be modified to meet Customer’s specific requirements.

Fractional frequency change

Configuration Fractional frequency change, ×10-6, max.
1st year of operation Operating lifetime Storage
А ± 0,5 ± 2,0 ± 2,0
B ± 1,0 ± 3,0 ± 3,0
No sign ± 3,0 ± 5,0 ± 5,0

Temperature instability of frequency within operating temperature range, х10-6

Operating temperature range, ˚С Temperature instability of frequency within operating temperature range, х10-6
±0,3
(V3)		 ±0,5
(G)		 ±1,0
(D)		 ±1,5
(G1)		 ±2,0
(D1)		 ±2,5
(E)		 ±3,0
(E1)		 ±5,0
(Zh)
0…+50 (L) + + + + + + + +
0…+70 (К) + + + + + + + +
-10…+60 (А) + + + + + + + +
-30…+60 (Е) + + + + + + + +
-30…+70 (P) + + + + + + + +
-30…+85 (R) + + + + + + + +
-40…+70 (B) + + + + + + + +
-40…+85 (S) + + + + + + + +
-60…+85 (G) - - - - - - - +

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